Invention Grant
- Patent Title: Photodetector and method for manufacturing the same
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Application No.: US14641472Application Date: 2015-03-09
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Publication No.: US09368654B2Publication Date: 2016-06-14
- Inventor: Thoralf Kautzsch
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/102 ; H01L31/062 ; G01J3/50 ; H01L31/18

Abstract:
A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate. The confined region is configured to generate free charge carriers in response to an irradiation. The photodetector further includes a read-out electrode arrangement configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. The photodetector also includes a biasing electrode arrangement that is electrically insulated against the confined region by means of the insulating arrangement. The biasing electrode arrangement is configured to cause an influence on a spatial charge carrier distribution within the confined region so that fewer of the free charge carriers recombine at boundaries of the confined region compared to an unbiased state.
Public/Granted literature
- US20150179833A1 Photodetector and Method for Manufacturing the Same Public/Granted day:2015-06-25
Information query
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