Invention Grant
US09373506B2 Method for treating surface of diamond thin film, method for forming transistor, and sensor device
有权
金刚石薄膜表面处理方法，晶体管形成方法及传感器装置
- Patent Title: Method for treating surface of diamond thin film, method for forming transistor, and sensor device
- Patent Title (中): 金刚石薄膜表面处理方法，晶体管形成方法及传感器装置
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Application No.: US14467153Application Date: 2014-08-25
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Publication No.: US09373506B2Publication Date: 2016-06-21
- Inventor: Yukihiro Shintani , Toshiyuki Saruya , Hiroshi Kawarada
- Applicant: YOKOGAWA ELECTRIC CORPORATION , WASEDA UNIVERSITY
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: YOKOGAWA ELECTRIC CORPORATION,WASEDA UNIVERSITY
- Current Assignee: YOKOGAWA ELECTRIC CORPORATION,WASEDA UNIVERSITY
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-175059 20130826; JP2014-138972 20140704
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/04 ; C23C16/27 ; C23C16/56 ; G01N27/414 ; H01L21/3065 ; H01L29/66
Abstract:
A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.
Public/Granted literature
- US20150054000A1 METHOD FOR TREATING SURFACE OF DIAMOND THIN FILM, METHOD FOR FORMING TRANSISTOR, AND SENSOR DEVICE Public/Granted day:2015-02-26
Information query
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