Invention Grant
US09377679B2 Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device 有权
反光掩模板及其制造方法,反射掩模的制造方法以及半导体装置的制造方法

  • Patent Title: Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
  • Patent Title (中): 反光掩模板及其制造方法,反射掩模的制造方法以及半导体装置的制造方法
  • Application No.: US14418629
    Application Date: 2013-07-27
  • Publication No.: US09377679B2
    Publication Date: 2016-06-28
  • Inventor: Kazuhiro HamamotoTatsuo AsakawaOsamu MaruyamaTsutomu Shoki
  • Applicant: HOYA CORPORATION
  • Applicant Address: JP Tokyo
  • Assignee: HOYA CORPORATION
  • Current Assignee: HOYA CORPORATION
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2012-169897 20120731
  • International Application: PCT/JP2013/070398 WO 20130727
  • International Announcement: WO2014/021235 WO 20140206
  • Main IPC: G03F1/24
  • IPC: G03F1/24 G03F1/48
Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
Abstract:
This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.
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