公开(公告)号：US10191365B2

公开(公告)日：2019-01-29

申请号：US15634247

申请日：2017-06-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F7/20

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.

公开(公告)号：US09377679B2

公开(公告)日：2016-06-28

申请号：US14418629

申请日：2013-07-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Osamu Maruyama ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。

公开(公告)号：US09720315B2

公开(公告)日：2017-08-01

申请号：US14787497

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/50 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.

公开(公告)号：US10347485B2

公开(公告)日：2019-07-09

申请号：US15508544

申请日：2015-09-14

Applicant: HOYA CORPORATION

Inventor： Tsutomu Shoki ,  Tatsuo Asakawa ,  Hirofumi Kozakai

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/76 ,  G03F1/80 ,  G03F1/86 ,  G03F7/20 ,  C23C14/18 ,  C23C14/34 ,  C23C14/46 ,  C23C14/58 ,  H01L21/027 ,  C23C14/00 ,  C23C14/06 ,  C23C14/35

Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

公开(公告)号：US09726969B2

公开(公告)日：2017-08-08

申请号：US14787532

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/50 ,  G03F1/84 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/84 ,  G03F7/2004

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.

公开(公告)号：US10996554B2

公开(公告)日：2021-05-04

申请号：US16796395

申请日：2020-02-20

Applicant: HOYA CORPORATION

Inventor： Takumi Kobayashi ,  Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/40 ,  G03F1/24 ,  G03F1/54

Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

公开(公告)号：US10606166B2

公开(公告)日：2020-03-31

申请号：US15580331

申请日：2016-06-08

Applicant: HOYA CORPORATION

Inventor： Takumi Kobayashi ,  Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/40 ,  G03F1/24 ,  G03F1/54

Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

公开(公告)号：US09535318B2

公开(公告)日：2017-01-03

申请号：US15179030

申请日：2016-06-10

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Osamu Maruyama ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。