Invention Grant
US09378941B2 Interface treatment of semiconductor surfaces with high density low energy plasma
有权
具有高密度低能量等离子体的半导体表面的界面处理
- Patent Title: Interface treatment of semiconductor surfaces with high density low energy plasma
- Patent Title (中): 具有高密度低能量等离子体的半导体表面的界面处理
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Application No.: US14064933Application Date: 2013-10-28
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Publication No.: US09378941B2Publication Date: 2016-06-28
- Inventor: Aneesh Nainani , Bhushan N. Zope , Leonid Dorf , Shahid Rauf , Adam Brand , Mathew Abraham , Subhash Deshmukh
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/768 ; H01L21/3065 ; H01J37/32 ; H01L21/8238 ; H01L21/8258
Abstract:
An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.
Public/Granted literature
- US20150093862A1 INTERFACE TREATMENT OF SEMICONDUCTOR SURFACES WITH HIGH DENSITY LOW ENERGY PLASMA Public/Granted day:2015-04-02
Information query
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