公开(公告)号：US12080519B2

公开(公告)日：2024-09-03

申请号：US17843830

申请日：2022-06-17

Applicant: Applied Materials, Inc.

Inventor： Jie Yu ,  Yue Guo ,  Kartik Ramaswamy ,  Tao Zhang ,  Shahid Rauf ,  John Forster ,  Sidharth Bhatia ,  Rong Gang Zheng

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32926

Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.

公开(公告)号：US10790180B2

公开(公告)日：2020-09-29

申请号：US16576645

申请日：2019-09-19

Applicant: Applied Materials, Inc.

Inventor： Chih-Hsun Hsu ,  Tza-Jing Gung ,  Benjamin Schwarz ,  Shahid Rauf ,  Ankur Agarwal ,  Vijay D. Parkhe ,  Michael D. Willwerth ,  Zhiqiang Guo

IPC: H01L21/683 ,  H01J37/32

Abstract: Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.

公开(公告)号：US10475626B2

公开(公告)日：2019-11-12

申请号：US14660531

申请日：2015-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US09520294B2

公开(公告)日：2016-12-13

申请号：US14505148

申请日：2014-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Ankur Agarwal ,  Rajinder Dhindsa ,  Shahid Rauf

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/3213 ,  B81C1/00 ,  H01J37/32

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  H01J37/32357 ,  H01J37/32706 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32135

Abstract: Atomic layer etching using alternating passivation and etching processes is performed with an electron beam plasma source, in which the ion energy is set to a low level below the etch threshold of the material to be etched during passivation and to a higher level above the etch threshold during etching but below the etch threshold of the unpassivated material.

Abstract translation: 使用电子束等离子体源来执行使用交替的钝化和蚀刻工艺的原子层蚀刻，其中在钝化期间将离子能量设置为低于待蚀刻材料的蚀刻阈值的低水平，并且在蚀刻阈值以上更高的水平 在蚀刻期间，但低于非钝化材料的蚀刻阈值。

公开(公告)号：US20160064231A1

公开(公告)日：2016-03-03

申请号：US14505168

申请日：2014-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Ankur Agarwal ,  Shahid Rauf ,  Kartik Ramaswamy

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  H01J37/32357 ,  H01J37/32706 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32135

Abstract: An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.

Abstract translation: 将蚀刻工艺气体提供给具有电子束等离子体源的主处理室，并且在周期性钝化操作期间，远程等离子体源向主处理室提供钝化物质，同时将离子能量限制在蚀刻离子能量阈值以下。 在周期性蚀刻操作期间，停止来自远程等离子体源的流动并将离子能量设定在蚀刻阈值以上。

公开(公告)号：US09082591B2

公开(公告)日：2015-07-14

申请号：US13863614

申请日：2013-04-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Jonathan Liu ,  Jason A. Kenney ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J7/24 ,  H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32082

Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.

Abstract translation: 电感耦合等离子体反应器具有三个同心线圈天线和分流器电路，其分别控制三个线圈天线中的每一个中的电流，通过响应于从一个线圈天线接收的线圈天线之间的期望的电流分配，改变分流器电路中的两个可变阻抗元件 用户界面。

公开(公告)号：US20150093862A1

公开(公告)日：2015-04-02

申请号：US14064933

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Aneesh Nainani ,  Bhushan N. Zope ,  Leonid Dorf ,  Shahid Rauf ,  Adam Brand ,  Mathew Abraham ,  Subhash Deshmukh

IPC: H01L21/02 ,  H01L21/768 ,  H01L29/66

CPC classification number: H01L21/02063 ,  H01J37/3233 ,  H01L21/02057 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/76814 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/66795

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.

Abstract translation: 电子束等离子体源用于含有Ge或III-V族化合物半导体材料的半导体表面的软等离子体表面处理。

公开(公告)号：US20150075717A1

公开(公告)日：2015-03-19

申请号：US14026205

申请日：2013-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Shahid Rauf ,  Steven Lane ,  Yang Yang ,  Lawrence Wong

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J2237/3348

Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to an array of radial toroidal channels in the ceiling.

Abstract translation: RF等离子体源具有谐振器，其短路端连接到处理室顶部并感应耦合到天花板中的径向环形通道阵列。

公开(公告)号：US20140312766A1

公开(公告)日：2014-10-23

申请号：US14319089

申请日：2014-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Jason A. Kenney ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/32119 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有具有两个线圈天线的顶部电感耦合等离子体源，并且对称和径向RF馈送以及围绕对称和径向RF馈送的圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20140265910A1

公开(公告)日：2014-09-18

申请号：US14174511

申请日：2014-02-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/3299

Abstract: Phase angle between opposing electrodes in a plasma reactor is controlled in accordance with a user selected phase angle. Direct digital synthesis of RF waveforms of different phases for the different electrodes is employed. The synthesis is synchronized with a reference clock. The address generator employed for direct digital synthesis is synchronized with an output clock signal that is generated in phase with the reference clock using a phase lock loop. The phase lock loop operates only during a limited initialization period.

Abstract translation: 根据用户选择的相位角来控制等离子体反应器中的相对电极之间的相位角。 采用不同电极的不同相的RF波形的直接数字合成。 该合成与参考时钟同步。 用于直接数字合成的地址发生器与使用锁相环与参考时钟同相产生的输出时钟信号同步。 锁相环只在有限的初始化时段内工作。