Invention Grant
US09385667B2 Photodetector integrated circuit (IC) having a sensor integrated thereon for sensing electromagnetic interference (EMI)
有权
具有集成在其上的用于感测电磁干扰(EMI)的传感器的光检测器集成电路(IC)
- Patent Title: Photodetector integrated circuit (IC) having a sensor integrated thereon for sensing electromagnetic interference (EMI)
- Patent Title (中): 具有集成在其上的用于感测电磁干扰(EMI)的传感器的光检测器集成电路(IC)
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Application No.: US13917955Application Date: 2013-06-14
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Publication No.: US09385667B2Publication Date: 2016-07-05
- Inventor: Thomas Lichtenegger , Martin Weigert , Robert Swoboda
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H03F3/08
- IPC: H03F3/08 ; G01J1/44 ; G01J1/42

Abstract:
A photodetector integrated circuit (IC) having an electromagnetic interference (EMI) sensor integrated therein is provided for sensing EMI at the photodetector. Integrating the EMI sensor into the photodetector IC ensures that the EMI sensor is in proximity to the photodetector so that any EMI that is sensed is actually EMI to which the photodetector is exposed. The sensed EMI may then be used for a number of reasons, such as to determine the root cause of damage to circuitry of the system, to determine the point in time at which an EMI event occurred, or to trigger a warning when a determination is made that an EMI limit has been reached.
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