Invention Grant
- Patent Title: Reconstituted wafer-level package DRAM
- Patent Title (中): 重构晶圆级封装DRAM
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Application No.: US13563085Application Date: 2012-07-31
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Publication No.: US09391008B2Publication Date: 2016-07-12
- Inventor: Ilyas Mohammed
- Applicant: Ilyas Mohammed
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/498 ; H01L25/065 ; H01L25/10 ; H01L25/18 ; H01L23/00

Abstract:
A microelectronic package includes first and second encapsulated microelectronic elements, each of which includes a semiconductor die having a front face and contacts thereon. An encapsulant contacts at least an edge surface of each semiconductor die and extends in at least one lateral direction therefrom. Electrically conductive elements extend from the contacts and over the front face to locations overlying the encapsulant. The first and second microelectronic elements are affixed to one another such that one of the front or back surfaces of one of the first and second semiconductor dies is oriented towards one of the front or back surfaces of the other of the first and second semiconductor dies. A plurality of electrically conductive interconnects extend through the encapsulants of the first and second microelectronic elements and are electrically connected with at least one semiconductor die of the first and second microelectronic elements by the conductive elements.
Public/Granted literature
- US20140035153A1 RECONSTITUTED WAFER-LEVEL PACKAGE DRAM Public/Granted day:2014-02-06
Information query
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