Invention Grant
- Patent Title: Field emission devices and methods of manufacturing emitters thereof
- Patent Title (中): 场致发射装置及其制造方法
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Application No.: US14474213Application Date: 2014-09-01
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Publication No.: US09396901B2Publication Date: 2016-07-19
- Inventor: Donggu Lee , Shanghyeun Park , Yongchul Kim , Ilhwan Kim , Taewon Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeongsangbukodo
- Assignee: Samsung Electronics Co., Ltd.,Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
- Current Assignee Address: KR Gyeonggi-do KR Gyeongsangbukodo
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0105099 20130902
- Main IPC: H01J1/308
- IPC: H01J1/308 ; H01J9/02 ; H01J1/304
Abstract:
A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.
Public/Granted literature
- US20150060758A1 FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING EMITTERS THEREOF Public/Granted day:2015-03-05
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