Invention Grant
- Patent Title: Semiconductor module
- Patent Title (中): 半导体模块
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Application No.: US14435690Application Date: 2013-10-25
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Publication No.: US09397030B2Publication Date: 2016-07-19
- Inventor: Takashi Sunaga , Noboru Kaneko , Osamu Miyoshi
- Applicant: NSK Ltd.
- Applicant Address: JP Tokyo
- Assignee: NSK Ltd.
- Current Assignee: NSK Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2012-243684 20121105; JP2013-175769 20130827
- International Application: PCT/JP2013/006342 WO 20131025
- International Announcement: WO2014/068937 WO 20140508
- Main IPC: H01L23/495
- IPC: H01L23/495 ; B62D5/04 ; H01L25/18 ; H01L23/00 ; H01L25/07

Abstract:
A semiconductor module is provided for shortening a manufacturing tact time, reducing manufacturing costs and for ensuring reliability of a bonding portion. The semiconductor module includes a substrate formed of a metal, an insulating layer formed on the substrate, a plurality of wiring patterns formed on the insulating layer, a bare-chip transistor mounted on one wiring pattern via a solder, and copper connectors that connect electrodes formed on the bear-chip transistor and other wiring patterns via a solder. The copper connectors have a bridge shape, have a width-reduced portion formed in the vicinity of the bonding face to the electrodes, and have a stress-reducing portion formed on the bonding face bonded to the electrode.
Public/Granted literature
- US20150270199A1 Semiconductor Module Public/Granted day:2015-09-24
Information query
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