Embodiments include a semiconductor device comprising: a gate layer comprising (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer; and a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance.