Invention Grant
US09401488B2 Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors
有权
碳 - 碳共晶金属合金欧姆接触碳纳米管场效应晶体管
- Patent Title: Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors
- Patent Title (中): 碳 - 碳共晶金属合金欧姆接触碳纳米管场效应晶体管
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Application No.: US14575078Application Date: 2014-12-18
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Publication No.: US09401488B2Publication Date: 2016-07-26
- Inventor: Monica P. Lilly , Matthew J. Walker , Wayne S. Miller , John X. Przybysz, Sr. , Andre E. Berghmans
- Applicant: Northrop Grumman Systems Corporation
- Applicant Address: US VA Falls Church
- Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
- Current Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
- Current Assignee Address: US VA Falls Church
- Agency: Andrews Kurth LLP
- Agent Sean S. Wooden
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/20 ; H01L29/745 ; H01L51/10 ; H01L51/00 ; H01L51/05

Abstract:
A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
Public/Granted literature
- US20160181557A1 COBALT-CARBON EUTECTIC METAL ALLOY OHMIC CONTACT FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS Public/Granted day:2016-06-23
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