Invention Grant
- Patent Title: Single platform, multiple cycle spacer deposition and etch
- Patent Title (中): 单平台，多循环间隔沉积和蚀刻
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Application No.: US14495794Application Date: 2014-09-24
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Publication No.: US09406522B2Publication Date: 2016-08-02
- Inventor: Hao Chen , Chentsau (Chris) Ying , Srinivas D. Nemani , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; C23C16/34 ; C23C16/455 ; C23C16/50 ; H01J37/32 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L21/311 ; H01L21/67 ; H01L21/677
Abstract:
A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
Public/Granted literature
- US20160027655A1 SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH Public/Granted day:2016-01-28
Information query
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