公开(公告)号：US11830725B2

公开(公告)日：2023-11-28

申请号：US17153450

申请日：2021-01-20

Applicant: Applied Materials, Inc.

Inventor： Naomi Yoshida ,  He Ren ,  Hao Jiang ,  Chenfei Shen ,  Chi-Chou Lin ,  Hao Chen ,  Xuesong Lu ,  Mehul B. Naik

IPC: H01L21/02 ,  H01L21/28 ,  B08B5/02 ,  H01L29/66 ,  H01L21/3205

CPC classification number: H01L21/02057 ,  B08B5/02 ,  H01L21/28026 ,  H01L21/32051 ,  H01L29/66795

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

公开(公告)号：US20220270871A1

公开(公告)日：2022-08-25

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US09406522B2

公开(公告)日：2016-08-02

申请号：US14495794

申请日：2014-09-24

Applicant: Applied Materials, Inc.

Inventor： Hao Chen ,  Chentsau (Chris) Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/3086 ,  C23C16/04 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67742

Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.

Abstract translation: 多周期间隔物的第一部分形成在衬底上的图案化特征的侧壁上。 使用第一等离子体工艺在第一部分上沉积间隔层。 使用第二等离子体工艺蚀刻间隔层以在第一部分上形成多循环间隔物的第二部分。 连续重复包括沉积和蚀刻间隔层的循环，直到形成多循环间隔物。

公开(公告)号：US20210351032A1

公开(公告)日：2021-11-11

申请号：US16867554

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Keyvan Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/67

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US10957590B2

公开(公告)日：2021-03-23

申请号：US16669082

申请日：2019-10-30

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai ,  Liqi Wu ,  Wenyu Zhang ,  Yongmei Chen ,  Hao Chen ,  Keith Tatseun Wong ,  Ke Chang

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

公开(公告)号：US10957533B2

公开(公告)日：2021-03-23

申请号：US16656018

申请日：2019-10-17

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  He Ren ,  Hao Chen ,  Mehul B. Naik

IPC: H01L21/02 ,  H01L21/30 ,  H01L21/477 ,  H01L21/3213 ,  H01L21/67

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming and patterning features in a film stack disposed on a substrate. In one embodiment, a method for patterning a conductive layer on a substrate includes supplying a gas mixture comprising a chlorine containing gas at a first flow rate to etch a first conductive layer disposed on the substrate, lowing the chlorine containing gas in the first gas mixture to a second flow rate lower than the first flow rate to continue etching the first conductive layer, and increasing the chlorine containing gas in the first gas mixture to a third flow rate greater than the second flow rate to remove the first conductive layer from the substrate.

公开(公告)号：US09852916B2

公开(公告)日：2017-12-26

申请号：US15194456

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Hao Chen ,  Chentsau (Chris) Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/677 ,  H01L21/033 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/28

CPC classification number: H01L21/3086 ,  C23C16/04 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67742

Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.

公开(公告)号：US11776806B2

公开(公告)日：2023-10-03

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02063 ,  H01L21/0234 ,  H01L21/02244 ,  H01L21/02334 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76879

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20160027655A1

公开(公告)日：2016-01-28

申请号：US14495794

申请日：2014-09-24

Applicant: Applied Materials, Inc.

Inventor： Hao Chen ,  Chentsau (Chris) Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/306 ,  C23C16/34 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/3086 ,  C23C16/04 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67742

Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.

公开(公告)号：US11380536B2

公开(公告)日：2022-07-05

申请号：US16867554

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.