Invention Grant
- Patent Title: Image sensor devices and methods for fabricating the same
- Patent Title (中): 图像传感器装置及其制造方法
-
Application No.: US14196759Application Date: 2014-03-04
-
Publication No.: US09406708B2Publication Date: 2016-08-02
- Inventor: Yu-Yuan Yao
- Applicant: Silicon Optronics, Inc.
- Applicant Address: TW Hsinchu
- Assignee: SILICON OPTRONICS, INC.
- Current Assignee: SILICON OPTRONICS, INC.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103101379A 20140115
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate located at one side of the channel, a voltage transfer region formed in the substrate located at the other side of the channel, a first gate dielectric layer formed on the substrate, a second gate dielectric layer formed on the substrate, wherein the first gate dielectric layer and the second gate dielectric layer have a joint above the channel, and the thickness of the first gate dielectric layer is thicker than that of the second gate dielectric layer, and a gate formed on the first gate dielectric layer and the second gate a is dielectric layer. The present invention also provides a method for fabricating the image sensor device.
Public/Granted literature
- US20150200228A1 IMAGE SENSOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2015-07-16
Information query
IPC分类:
