Invention Grant
- Patent Title: Fin-FET
-
Application No.: US14749648Application Date: 2015-06-25
-
Publication No.: US09406805B2Publication Date: 2016-08-02
- Inventor: Chen-Hua Tsai , Rai-Min Huang , Sheng-Huei Dai , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L21/02 ; H01L21/20
Abstract:
A Fin-FET and a method of forming the Fin-FET are provided. A substrate is provided, and then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive layer becomes a fin structure embedded in the substrate and protruded above the substrate. Finally, a gate layer is formed on the fin structure.
Public/Granted literature
- US20150295090A1 Fin-FET Public/Granted day:2015-10-15
Information query
IPC分类:
