Invention Grant
US09411681B2 Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory 有权
通过参考从闪速存储器读取的比特序列的二进制数字分配特性来读取存储在闪速存储器中的数据的方法和装置

  • Patent Title: Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory
  • Patent Title (中): 通过参考从闪速存储器读取的比特序列的二进制数字分配特性来读取存储在闪速存储器中的数据的方法和装置
  • Application No.: US14957563
    Application Date: 2015-12-02
  • Publication No.: US09411681B2
    Publication Date: 2016-08-09
  • Inventor: Tsung-Chieh Yang
  • Applicant: Silicon Motion Inc.
  • Applicant Address: TW Hsinchu County
  • Assignee: Silicon Motion Inc.
  • Current Assignee: Silicon Motion Inc.
  • Current Assignee Address: TW Hsinchu County
  • Agent Winston Hsu; Scott Margo
  • Main IPC: G11C16/00
  • IPC: G11C16/00 G06F11/10 G11C16/26 G11C29/52
Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory
Abstract:
A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.
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