Invention Grant
- Patent Title: Temperature measuring method and plasma processing system
- Patent Title (中): 温度测量方法和等离子体处理系统
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Application No.: US14609554Application Date: 2015-01-30
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Publication No.: US09412565B2Publication Date: 2016-08-09
- Inventor: Yusuke Yoshida , Ryou Son , Takahiro Senda , Masayuki Kohno , Naoki Matsumoto
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2014-019634 20140204
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01J37/32 ; G01J5/00 ; G01J5/08 ; G01J5/06
Abstract:
A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (Tmeas) according to a measurement window temperature (Tw), the function (f) being computed based on the correction target temperature (Tmeas) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (Tobj) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (Tw) corresponding to a temperature of the measurement window. The temperature measuring method further involves measuring the correction target temperature (Tmeas), measuring the measurement window temperature (Tw), and correcting the correction target temperature (Tmeas) according to the measurement window temperature (Tw) based on the obtained function (f).
Public/Granted literature
- US20150221482A1 TEMPERATURE MEASURING METHOD AND PLASMA PROCESSING SYSTEM Public/Granted day:2015-08-06
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