Invention Grant
US09412613B2 Development of high etch selective hardmask material by ion implantation into amorphous carbon films
有权
通过离子注入到无定形碳膜中开发高蚀刻选择性硬掩模材料
- Patent Title: Development of high etch selective hardmask material by ion implantation into amorphous carbon films
- Patent Title (中): 通过离子注入到无定形碳膜中开发高蚀刻选择性硬掩模材料
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Application No.: US14574928Application Date: 2014-12-18
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Publication No.: US09412613B2Publication Date: 2016-08-09
- Inventor: Pramit Manna , Abhijit Basu Mallick , Ludovic Godet , Yongmei Chen , Jun Xue , Mukund Srinivasan , Ellie Y. Yieh , Srinivas D. Nemani
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/311 ; H01L21/3115
Abstract:
Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.
Public/Granted literature
- US20150194317A1 DEVELOPMENT OF HIGH ETCH SELECTIVE HARDMASK MATERIAL BY ION IMPLANTATION INTO AMORPHOUS CARBON FILMS Public/Granted day:2015-07-09
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