Invention Grant
- Patent Title: High density three-dimensional integrated capacitors
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Application No.: US13954455Application Date: 2013-07-30
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Publication No.: US09431475B2Publication Date: 2016-08-30
- Inventor: Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia
- Applicant: Tessera, Inc.
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/48

Abstract:
A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.
Public/Granted literature
- US20130313680A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS Public/Granted day:2013-11-28
Information query
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