Invention Grant
- Patent Title: Micromechanical inertial sensor and method for manufacturing same
- Patent Title (中): 微机械惯性传感器及其制造方法
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Application No.: US13890752Application Date: 2013-05-09
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Publication No.: US09434606B2Publication Date: 2016-09-06
- Inventor: Johannes Classen , Mirko Hattass , Daniel Christoph Meisel
- Applicant: Robert Bosch GmbH
- Applicant Address: DE Stuttgart
- Assignee: ROBERT BOSCH GMBH
- Current Assignee: ROBERT BOSCH GMBH
- Current Assignee Address: DE Stuttgart
- Agency: Norton Rose Fulbright US LLP
- Priority: DE102012208030 20120514
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00 ; G01P15/00 ; G01P15/08

Abstract:
A micromechanical inertial sensor includes an ASIC element having a processed front side, an MEMS element having a micromechanical sensor structure, and a cap wafer mounted above the micromechanical sensor structure, which sensor structure includes a seismic mass and extends over the entire thickness of the MEMS substrate. The MEMS element is mounted on the processed front side of the ASIC element above a standoff structure and is electrically connected to the ASIC element via through-contacts in the MEMS substrate and in adjacent supports of the standoff structure. A blind hole is formed in the MEMS substrate in the area of the seismic mass, which blind hole is filled with the same electrically conductive material as the through-contacts, the conductive material having a greater density than the MEMS substrate.
Public/Granted literature
- US20130299925A1 MICROMECHANICAL INERTIAL SENSOR AND METHOD FOR MANUFACTURING SAME Public/Granted day:2013-11-14
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