Invention Grant
- Patent Title: Infrared sensor
- Patent Title (中): 红外传感器
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Application No.: US14003728Application Date: 2012-03-22
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Publication No.: US09435691B2Publication Date: 2016-09-06
- Inventor: Kenzo Nakamura , Mototaka Ishikawa , Gakuji Uozumi
- Applicant: Kenzo Nakamura , Mototaka Ishikawa , Gakuji Uozumi
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2011-076768 20110330
- International Application: PCT/JP2012/001976 WO 20120322
- International Announcement: WO2012/132342 WO 20121004
- Main IPC: G01J5/02
- IPC: G01J5/02 ; G01J5/08 ; G01J5/00 ; G01J5/04 ; G01J5/20

Abstract:
A lightweight infrared sensor that detects a temperature at a portion spaced apart from a circuit substrate with high accuracy, is installed on the circuit substrate easily and stably, and includes an insulating film; a first and a second heat sensitive elements are disposed on one surface of the insulating film separately; a first conductive film on the insulating film that is connected to the first heat sensitive element; a second conductive film connected to the second heat sensitive element; an infrared reflection film on the other surface of the insulating film so as to face the second heat sensitive element; a plurality of terminal electrodes formed on one end of the insulating film and fitted into an external connector; an edge reinforcing plate adhered to one end of one surface of the insulating film; and a mounting hole that is formed on the other end.
Public/Granted literature
- US20140010262A1 INFRARED SENSOR Public/Granted day:2014-01-09
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