Invention Grant
US09440135B2 Multilayer electronic structures with integral vias extending in in-plane direction
有权
具有在平面方向上延伸的整体通孔的多层电子结构
- Patent Title: Multilayer electronic structures with integral vias extending in in-plane direction
- Patent Title (中): 具有在平面方向上延伸的整体通孔的多层电子结构
-
Application No.: US13482045Application Date: 2012-05-29
-
Publication No.: US09440135B2Publication Date: 2016-09-13
- Inventor: Dror Hurwitz
- Applicant: Dror Hurwitz
- Applicant Address: CN Zhuhai
- Assignee: Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd.
- Current Assignee: Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd.
- Current Assignee Address: CN Zhuhai
- Agency: Wiggin and Dana LLP
- Agent Gregory S. Rosenblatt; Jonathan Daniel Hall
- Main IPC: H05K1/11
- IPC: H05K1/11 ; A63B69/36 ; A63B69/00

Abstract:
A multilayer electronic support structure comprising at least one pair of adjacent feature layers extending in an X-Y plane that are separated by a via layer; said via layer comprising a dielectric material that is sandwiched between the two adjacent feature layers and at least one one non-cylindrical via post that couples said pair of adjacent feature layers through the dielectric material in a Z direction perpendicular to the X-Y plane; wherein said at least one non-cylindrical via post is characterized by having a long dimension in the X-Y plane that is at least 3 times as long as a short dimension in the X-Y plane.
Public/Granted literature
- US20130319736A1 MULTILAYER ELECTRONIC STRUCTURES WITH INTEGRAL VIAS EXTENDING IN IN-PLANE DIRECTION Public/Granted day:2013-12-05
Information query