Invention Grant
- Patent Title: Method for removing impurities from silicon
- Patent Title (中): 从硅中去除杂质的方法
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Application No.: US13513611Application Date: 2010-12-06
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Publication No.: US09458294B2Publication Date: 2016-10-04
- Inventor: Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold , Thoralf Gebel
- Applicant: Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold , Thoralf Gebel
- Applicant Address: LU Luxembourg
- Assignee: Spawnt Private S.à.r.l.
- Current Assignee: Spawnt Private S.à.r.l.
- Current Assignee Address: LU Luxembourg
- Agency: DLA Piper LLP (US)
- Priority: DE102009056731 20091204
- International Application: PCT/EP2010/068974 WO 20101206
- International Announcement: WO2011/067410 WO 20110609
- Main IPC: C01B33/08
- IPC: C01B33/08 ; C08G77/60 ; C01B33/04 ; C01G17/00 ; C08G79/14
Abstract:
A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1
Public/Granted literature
- US20130039830A1 METHOD FOR REMOVING IMPURITIES FROM SILICON Public/Granted day:2013-02-14
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