Invention Grant
- Patent Title: Capacitive pressure sensors for high temperature applications
- Patent Title (中): 用于高温应用的电容式压力传感器
-
Application No.: US14185156Application Date: 2014-02-20
-
Publication No.: US09464950B2Publication Date: 2016-10-11
- Inventor: Weibin Zhang , Anita Fink , Saeed Fahimi , Kimiko J. Childress
- Applicant: Rosemount Aerospace Inc.
- Applicant Address: US MN Burnsville
- Assignee: Rosemount Aerospace Inc.
- Current Assignee: Rosemount Aerospace Inc.
- Current Assignee Address: US MN Burnsville
- Agency: Locke Lord LLP
- Agent Scott D. Wofsy; Christopher J. Cillié
- Main IPC: G01L1/14
- IPC: G01L1/14 ; G01L9/00 ; G01L19/00 ; G01L19/06

Abstract:
A capacitive pressure sensor includes a substrate wafer and a diaphragm wafer. The substrate wafer defines a substrate recess with a first recess. The diaphragm wafer defines a diaphragm recess with a second recess. The diaphragm wafer is bonded to the substrate wafer such that the substrate and diaphragm recesses form a height differentiated pressure chamber.
Public/Granted literature
- US20150276512A1 CAPACITIVE PRESSURE SENSORS FOR HIGH TEMPERATURE APPLICATIONS Public/Granted day:2015-10-01
Information query