Invention Grant
- Patent Title: Charged particle beam writing apparatus and charged particle beam writing method
- Patent Title (中): 带电粒子束写入装置和带电粒子束写入方法
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Application No.: US14798797Application Date: 2015-07-14
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Publication No.: US09472372B2Publication Date: 2016-10-18
- Inventor: Taku Yamada , Kaoru Tsuruta , Yasuyuki Taneda , Kenji Ohtoshi
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Yokohama
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Yokohama
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-146352 20140716
- Main IPC: G21K5/04
- IPC: G21K5/04 ; H01J37/147 ; H01J37/141 ; H01J37/04

Abstract:
A charged particle beam writing apparatus includes a stage configured to mount a sample placed thereon; an electron optical column including a charged particle gun and deflector, wherein the charged particle gun is configured to emit a charged particle beam, and the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam; an ozone introducing mechanism configured to introduce ozone into the electron optical column; a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes, wherein a negative voltage in which the deflection voltage and the negative DC voltage are added is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam.
Public/Granted literature
- US20160020063A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD Public/Granted day:2016-01-21
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