Invention Grant
- Patent Title: Reinforcing sheet and method for producing secondary mounted semiconductor device
- Patent Title (中): 加强片及其制造方法
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Application No.: US14775445Application Date: 2014-03-12
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Publication No.: US09472439B2Publication Date: 2016-10-18
- Inventor: Naohide Takamoto , Kosuke Morita , Hiroyuki Senzai
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki-shi
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2013-050794 20130313
- International Application: PCT/JP2014/056441 WO 20140312
- International Announcement: WO2014/142154 WO 20140918
- Main IPC: H01L21/683
- IPC: H01L21/683 ; B32B27/08 ; H01L21/56 ; H01L23/00 ; B32B7/12 ; B32B5/02 ; B32B5/26 ; B32B15/08 ; B32B25/06 ; B32B25/08 ; B32B25/10 ; B32B25/12 ; B32B25/14 ; B32B27/10 ; B32B27/12 ; B32B27/20 ; B32B27/22 ; B32B27/28 ; B32B27/30 ; B32B27/32 ; B32B27/34 ; B32B27/36 ; B32B27/38 ; B32B27/40 ; B32B27/42 ; B32B29/00 ; H01L23/31

Abstract:
Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.
Public/Granted literature
- US20160042986A1 REINFORCING SHEET AND METHOD FOR PRODUCING SECONDARY MOUNTED SEMICONDUCTOR DEVICE Public/Granted day:2016-02-11
Information query
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