Patent search ap:("NITTO DENKO CORPORATION") AND inv:"Naohide Takamoto" Page 1

1.

发明授权
Film for semiconductor back surface and its use 有权

公开(公告)号：US09768050B2

公开(公告)日：2017-09-19

申请号：US15168847

申请日：2016-05-31

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto , Ryuichi Kimura

IPC: H01L21/683 , H01L21/78 , H01L23/00 , H01L23/544 , H01L21/56

CPC classification number: H01L21/6836 , H01L21/561 , H01L21/78 , H01L23/544 , H01L23/562 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2221/68327 , H01L2221/68336 , H01L2221/68377 , H01L2223/54433 , H01L2223/54486 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16227 , H01L2224/16245 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/81193 , H01L2224/81815 , H01L2224/8191 , H01L2224/83104 , H01L2224/83862 , H01L2224/92 , H01L2224/92125 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/3511 , H01L2924/00014 , H01L2924/01083 , H01L2224/81 , H01L2224/83 , H01L2924/00

Abstract: It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.

2.

发明申请
SEMICONDUCTOR PACKAGE MANUFACTURING METHOD 审中-公开

公开(公告)号：US20170140948A1

公开(公告)日：2017-05-18

申请号：US15349855

申请日：2016-11-11

Applicant: NITTO DENKO CORPORATION

Inventor： Ryuichi Kimura , Naohide Takamoto , Goji Shiga

IPC: H01L21/56

CPC classification number: H01L21/568 , H01L21/561 , H01L21/6835 , H01L23/544 , H01L24/97 , H01L2221/68327 , H01L2221/68381 , H01L2223/54486 , H01L2224/12105

Abstract: A method is provided for manufacturing a semiconductor package capable of preventing positional dislocation of semiconductor chip(s) as a result of contraction due to thermal curing of resin(s). This relates to a semiconductor package manufacturing method comprising an operation in which semiconductor chip(s) is/are arranged over semiconductor backside protective film which is arranged over an adhesive sheet; an operation in which semiconductor backside protective film is cured; and an operation in which semiconductor chip(s) is/are sealed with resin.

3.

发明授权
Reinforcing sheet and method for producing secondary mounted semiconductor device 有权
Title translation: 加强片及其制造方法

公开(公告)号：US09472439B2

公开(公告)日：2016-10-18

申请号：US14775445

申请日：2014-03-12

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto , Kosuke Morita , Hiroyuki Senzai

IPC: H01L21/683 , B32B27/08 , H01L21/56 , H01L23/00 , B32B7/12 , B32B5/02 , B32B5/26 , B32B15/08 , B32B25/06 , B32B25/08 , B32B25/10 , B32B25/12 , B32B25/14 , B32B27/10 , B32B27/12 , B32B27/20 , B32B27/22 , B32B27/28 , B32B27/30 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/38 , B32B27/40 , B32B27/42 , B32B29/00 , H01L23/31

CPC classification number: H01L21/6836 , B32B5/02 , B32B5/26 , B32B7/12 , B32B15/08 , B32B25/06 , B32B25/08 , B32B25/10 , B32B25/12 , B32B25/14 , B32B27/08 , B32B27/10 , B32B27/12 , B32B27/20 , B32B27/22 , B32B27/281 , B32B27/283 , B32B27/285 , B32B27/288 , B32B27/304 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/38 , B32B27/40 , B32B27/42 , B32B29/005 , B32B2255/02 , B32B2255/10 , B32B2255/12 , B32B2255/20 , B32B2255/205 , B32B2262/0269 , B32B2262/101 , B32B2307/50 , B32B2307/514 , B32B2307/558 , B32B2457/00 , B32B2457/14 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/97 , H01L2221/68318 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2224/13101 , H01L2224/16225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/81191 , H01L2924/15787 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012

Abstract: Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.

Abstract translation: 本发明提供能够形成耐冲击性优异的二次安装半导体装置的增强片，能够提高二次安装工序的效率。以及使用该增强片的二次安装半导体器件的制造方法。本发明提供了一种用于加强二次安装的半导体器件的加强片，其中具有形成在第一主表面上的凸起电极的初级安装半导体器件通过凸块电极与布线基板电连接，其中加强片包括基底材料层，压敏粘合剂层和热固性树脂层，并且压敏粘合剂层的断裂强度为0.07MPa以上，熔融粘度在60Pa以下为4000Pa·s以下 100°C

4.

发明申请
ADHESIVE FILM FOR UNDERFILL, ADHESIVE FILM FOR UNDERFILL INTEGRATED WITH TAPE FOR GRINDING REAR SURFACE, ADHESIVE FILM FOR UNDERFILL INTEGRATED WITH DICING TAPE, AND SEMICONDUCTOR DEVICE 审中-公开
Title translation: 用于底片的粘合膜，用于底面的用于研磨后表面的粘合膜，用于与底层组合的粘合膜和半导体器件

公开(公告)号：US20160040045A1

公开(公告)日：2016-02-11

申请号：US14782292

申请日：2014-03-27

Applicant: NITTO DENKO CORPORATION

Inventor： Kosuke Morita , Naohide Takamoto , Hiroyuki Hanazono , Akihiro Fukui

IPC: C09J133/12 , C09J163/00 , H01L23/31 , H01L21/56 , H01L23/29 , C08K3/36 , H01L21/683

CPC classification number: C09J133/12 , B32B7/12 , B32B27/08 , B32B27/20 , B32B27/308 , B32B27/38 , B32B27/42 , B32B2264/10 , B32B2307/718 , B32B2405/00 , B32B2457/00 , C08G14/04 , C08K3/36 , C08L21/00 , C08L33/10 , C08L61/00 , C08L63/00 , C09J7/10 , C09J133/10 , C09J161/06 , C09J161/34 , C09J163/00 , C09J2201/61 , C09J2203/326 , C09J2421/00 , C09J2461/00 , C09J2463/00 , H01L21/563 , H01L21/6836 , H01L23/295 , H01L23/3142 , H01L24/14 , H01L24/27 , H01L24/29 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2221/68381 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/27436 , H01L2224/2929 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81193 , H01L2224/83191 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , C08L61/04

Abstract: The present invention provides an adhesive film for underfill that is capable of increasing a glass transition temperature without losing flexibility. The present invention relates to an adhesive film for underfill containing resin components containing an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and an elastomer in which a content of the epoxy resin in the resin components is 5 to 50% by weight, and the content of the phenol resin in the resin components is 5 to 50% by weight.

Abstract translation: 本发明提供了能够提高玻璃化转变温度而不丧失柔软性的底部填充用粘合膜。本发明涉及含有数均分子量为600以下的环氧树脂，数均分子量超过500的酚醛树脂和含有环氧树脂含量的弹性体的底层填充用粘合膜，树脂成分中的树脂为5〜50重量％，树脂成分中的酚醛树脂的含量为5〜50重量％。

5.

发明授权
Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device 有权
Title translation: 用于半导体背面的切割带集成膜，以及用于制造半导体器件的工艺

公开(公告)号：US09050773B2

公开(公告)日：2015-06-09

申请号：US14052154

申请日：2013-10-11

Applicant: Nitto Denko Corporation

Inventor： Fumiteru Asai , Goji Shiga , Naohide Takamoto

IPC: B32B7/12 , B32B27/00 , B32B7/02 , B32B27/08 , B32B9/00 , B32B33/00 , B44C5/08 , B32B7/06 , C09J7/02 , C09J201/00 , H01L21/68 , H01L21/683 , H01L21/56 , H01L23/00

CPC classification number: B32B7/06 , B32B7/02 , B32B7/12 , C09J7/20 , C09J201/00 , H01L21/563 , H01L21/68 , H01L21/6836 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68377 , H01L2223/54486 , H01L2224/131 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/8101 , H01L2224/81815 , H01L2224/83007 , H01L2224/83104 , H01L2924/12042 , Y10T428/24942 , Y10T428/26 , H01L2924/00014 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带，在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜，第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

6.

发明授权
Dicing tape-integrated wafer back surface protective film 有权

公开(公告)号：US08841780B2

公开(公告)日：2014-09-23

申请号：US14095164

申请日：2013-12-03

Applicant: Nitto Denko Corporation

Inventor： Naohide Takamoto , Takeshi Matsumura

IPC: H01L23/48 , H01L23/52 , H01L29/40

CPC classification number: H01L21/6836 , H01L23/544 , H01L23/562 , H01L24/81 , H01L2221/68327 , H01L2223/5448 , H01L2224/16 , H01L2224/27436 , H01L2224/81801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01079 , H01L2924/12042 , Y10T428/1467 , Y10T428/28 , Y10T428/2848 , Y10T428/31511 , H01L2924/00 , H01L2224/0401

Abstract: The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

7.

发明申请
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
Title translation: 生产半导体器件的方法

公开(公告)号：US20130137219A1

公开(公告)日：2013-05-30

申请号：US13686852

申请日：2012-11-27

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroyuki Senzai , Naohide Takamoto , Kosuke Morita

IPC: H01L21/78

CPC classification number: H01L21/78 , H01L21/563 , H01L2924/0002 , H01L2924/00

Abstract: There is provided a method for producing a semiconductor device, which is capable of suppressing voids during mounting of a semiconductor element to produce a semiconductor device with high reliability. A method for producing a semiconductor device of the present invention includes the steps of: providing a sealing sheet having a base material and an under-fill material laminated on the base material; bonding the sealing sheet to a surface of a semiconductor wafer on which a connection member is formed; dicing the semiconductor wafer to form a semiconductor element with the under-fill material; retaining the semiconductor element with the under-fill material at 100 to 200° C. for 1 second or more; and electrically connecting the semiconductor element and the adherend through the connection member while filling a space between the adherend and the semiconductor element with the under-fill material.

Abstract translation: 提供一种制造半导体器件的方法，其能够在半导体元件的安装期间抑制空穴以制造具有高可靠性的半导体器件。本发明的半导体装置的制造方法包括以下步骤：提供层叠在基材上的基材和填充材料的密封片; 将密封片接合到其上形成有连接构件的半导体晶片的表面; 切割半导体晶片以形成具有欠填充材料的半导体元件; 在100〜200℃保持半导体元件与欠补充材料1秒以上; 并且通过所述连接构件将所述半导体元件和所述被粘物电连接，同时用所述填充材料填充所述被粘体和所述半导体元件之间的空间。

8.

发明授权
Film for flip chip type semiconductor back surface and its use 有权

公开(公告)号：US10211083B2

公开(公告)日：2019-02-19

申请号：US14191562

申请日：2014-02-27

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto , Goji Shiga , Fumiteru Asai

IPC: H01L21/683 , H01L23/31 , H01L23/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.

9.

发明授权
Dicing-tape integrated film for backside of semiconductor and method of manufacturing semiconductor device 有权

公开(公告)号：US10141217B2

公开(公告)日：2018-11-27

申请号：US14710696

申请日：2015-05-13

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto , Hiroyuki Hanazono , Akihiro Fukui

IPC: H01L23/40 , H01L23/52 , H01L29/40 , H01L21/683 , H01L23/00 , H01L23/544

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (γ2−γ1) of the surface free energy γ2 and the surface free energy γ1 is 10 mJ/m2 or more, where γ1 represents the surface free energy of the pressure-sensitive adhesive layer and γ2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.