Invention Grant
- Patent Title: Charged particle beam writing apparatus, and charged particle beam writing method
- Patent Title (中): 带电粒子束写入装置和带电粒子束写入方法
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Application No.: US14942164Application Date: 2015-11-16
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Publication No.: US09484185B2Publication Date: 2016-11-01
- Inventor: Mizuna Suganuma , Noriaki Nakayamada , Yasuo Kato
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Yokohama
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Yokohama
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-235901 20141120
- Main IPC: H01J37/302
- IPC: H01J37/302 ; H01J37/317

Abstract:
A charged particle beam writing apparatus includes a correction term calculation processing circuitry to calculate a correction term which corrects an error of a proximity effect density of a figure pattern to be written, compared against the figure pattern at design stage, a proximity effect correction dose coefficient calculation processing circuitry to calculate a proximity effect correction dose coefficient for correcting a proximity effect, by using the correction term, a dose calculation processing circuitry to calculate a dose of a charged particle beam by using the proximity effect correction dose coefficient, and a writing mechanism to write the figure pattern on a target object by using the charged particle beam whose dose is the dose calculated.
Public/Granted literature
- US20160148785A1 CHARGED PARTICLE BEAM WRITING APPARATUS, AND CHARGED PARTICLE BEAM WRITING METHOD Public/Granted day:2016-05-26
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