Invention Grant
US09502563B2 Semiconductor device having embedded strain-inducing pattern and method of forming the same
有权
具有嵌入式应变诱发图案的半导体器件及其形成方法
- Patent Title: Semiconductor device having embedded strain-inducing pattern and method of forming the same
- Patent Title (中): 具有嵌入式应变诱发图案的半导体器件及其形成方法
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Application No.: US15071502Application Date: 2016-03-16
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Publication No.: US09502563B2Publication Date: 2016-11-22
- Inventor: Dong-Suk Shin , Myung-Sun Kim , Seong-Jin Nam , Pan-Kwi Park , Hoi-Sung Chung , Nae-In Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP.
- Priority: KR10-2012-0060048 20120604
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L29/08 ; H01L29/165 ; H01L21/8238 ; H01L21/02 ; H01L21/306 ; H01L29/16 ; H01L29/161 ; H01L27/088 ; H01L27/11 ; H01L29/45 ; H01L29/51 ; H01L21/28 ; H01L29/10 ; H01L29/786
Abstract:
In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.
Public/Granted literature
- US20160197188A1 SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN AND METHOD OF FORMING THE SAME Public/Granted day:2016-07-07
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