Invention Grant
US09507254B2 Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device
有权
利用多层反射膜制造衬底的方法,制造反射掩模板的方法,具有多层反射膜的衬底,反射掩模板,反射掩模和制造半导体器件的方法
- Patent Title: Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device
- Patent Title (中): 利用多层反射膜制造衬底的方法,制造反射掩模板的方法,具有多层反射膜的衬底,反射掩模板,反射掩模和制造半导体器件的方法
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Application No.: US14423494Application Date: 2013-09-24
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Publication No.: US09507254B2Publication Date: 2016-11-29
- Inventor: Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Tsutomu Shoki , Junichi Horikawa
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-216525 20120928
- International Application: PCT/JP2013/075754 WO 20130924
- International Announcement: WO2014/050831 WO 20140403
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/50 ; G03F1/76 ; G03F1/24 ; G03F1/68 ; G03F1/52 ; G03F7/20 ; H01L21/027

Abstract:
An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.
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