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    Mask blank glass substrate, multilayer reflective film coated substrate, mask blank, mask, and methods of manufacturing the same
    2.
    发明授权
    Mask blank glass substrate, multilayer reflective film coated substrate, mask blank, mask, and methods of manufacturing the same 有权
    掩模坯玻璃基板，多层反射膜涂布基板，掩模板，掩模及其制造方法

    公开(公告)号：US09195131B2

    公开(公告)日：2015-11-24

    申请号：US13630622

    申请日：2012-09-28

    Applicant: HOYA CORPORATION

    Inventor： Toshihiko Orihara ,  Akihiro Kawahara ,  Tsutomu Shoki

    IPC: G03F1/24 ,  G03F1/38 ,  G03F1/60

    CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/60

    Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.

    Abstract translation: 提供了具有高表面平滑度的掩模坯料玻璃基板，其形成有能够提高缺陷位置等的检测精度的基准标记，并且能够重复利用或再循环包含在其中的玻璃基板。 在掩模坯料用玻璃基板的主表面上形成有转印图案的一侧的底层形成。 底层用于降低玻璃基板的主表面的表面粗糙度或减少玻璃基板的主表面的缺陷。 底层的表面是精密抛光的表面。 在缺陷信息中提供缺陷位置的基准的基准标记形成在底层上。

    Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device
    3.
    发明授权
    Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device 有权
    利用多层反射膜制造衬底的方法，制造反射掩模板的方法，具有多层反射膜的衬底，反射掩模板，反射掩模和制造半导体器件的方法

    公开(公告)号：US09507254B2

    公开(公告)日：2016-11-29

    申请号：US14423494

    申请日：2013-09-24

    Applicant: HOYA CORPORATION

    Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Tsutomu Shoki ,  Junichi Horikawa

    IPC: G03F1/22 ,  G03F1/50 ,  G03F1/76 ,  G03F1/24 ,  G03F1/68 ,  G03F1/52 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/52 ,  G03F1/68 ,  G03F7/20 ,  H01L21/0274

    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.

    Abstract translation: 本发明涉及一种具有多层反射膜的基板的制造方法，所述多层反射膜具有通过交替层叠高折射率层和低折射率层而获得的多层反射膜，所述多层反射膜在所述侧面上的掩模基板的主表面上 其中形成转印图案的步骤包括以下步骤：通过使用由高折射率材料和低折射率材料构成的靶使用离子束溅射将多层反射膜沉积在主表面上; 其中，在离子束溅射期间，使高折射率材料和低折射率材料的溅射颗粒相对于主表面的法线以规定的入射角进入，使得在规定的空间频率区域中的功率谱密度 是规定值。

    Substrate with multilayer reflective film, reflective mask blank for EUV lithography, method of manufacturing reflective mask for EUV lithography and method of manufacturing semiconductor device
    5.
    发明授权
    Substrate with multilayer reflective film, reflective mask blank for EUV lithography, method of manufacturing reflective mask for EUV lithography and method of manufacturing semiconductor device 有权
    具有多层反射膜的基板，用于EUV光刻的反射掩模板，用于EUV光刻的反射掩模的制造方法和半导体器件的制造方法

    公开(公告)号：US09383637B2

    公开(公告)日：2016-07-05

    申请号：US14373715

    申请日：2013-03-21

    Applicant: HOYA CORPORATION

    Inventor： Takahiro Onoue ,  Toshihiko Orihara

    IPC: G03F1/48 ,  G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/033

    CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  H01L21/0332 ,  H01L21/0337 ,  Y10T428/31678

    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.

    Abstract translation: 本发明的目的是提供一种用于制造用于EUV光刻的反射掩模坯料的多层反射膜等的衬底，其将用Cl基气体进行干蚀刻，其中在衬底 通过多层反射膜，通过干蚀刻和随后的湿法清洁的保护膜的损失非常有限。 本发明是一种具有用于制造用于EUV光刻的反射掩模板的多层反射膜的基板，包括基板，设置在基板上以反射EUV光的多层反射膜以及设置在多层反射层上的保护膜 膜保护多层反射膜，保护膜包括含有至少两种金属的合金，该合金是全比例的固溶体。

    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
    6.
    发明申请
    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 有权
    掩模基板，多层反射膜基板，传输掩模空白，反射掩模，传输掩模，反射掩模和半导体器件制造方法

    公开(公告)号：US20140329174A1

    公开(公告)日：2014-11-06

    申请号：US14348349

    申请日：2013-03-28

    Applicant: HOYA CORPORATION

    Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

    IPC: G03F1/50

    CPC classification number: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

    Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） ＆nlE; 1.2nm的轴承面积（％）和轴承深度（nm）之间的关系，通过使用原子力显微镜测量在基板侧的主表面中的1μm的面积， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30被定义为分别表示30％的轴承面积的轴承深度和轴承 面积达70％。

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