Invention Grant
US09508608B2 Monitoring laser processing of semiconductors by raman spectroscopy
有权
通过拉曼光谱法监测半导体的激光加工
- Patent Title: Monitoring laser processing of semiconductors by raman spectroscopy
- Patent Title (中): 通过拉曼光谱法监测半导体的激光加工
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Application No.: US14305435Application Date: 2014-06-16
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Publication No.: US09508608B2Publication Date: 2016-11-29
- Inventor: Jiping Li
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; G01N21/65 ; H01L21/67

Abstract:
A Raman probe is used to detect crystal structure of a substrate undergoing thermal processing in a thermal processing system. The Raman probe may be coupled to a targeting system of a laser thermal processing system. The Raman probe includes a laser positioned to direct probe radiation through the targeting system to the substrate, a receiver attuned to Raman radiation emitted by the substrate, and a filter that blocks laser radiation reflected by the substrate. The Raman probe may include more than one laser, more than one receiver, and more than one filter. The Raman probe may provide more than one wavelength of incident radiation to probe the substrate at different depths.
Public/Granted literature
- US20140370627A1 MONITORING LASER PROCESSING OF SEMICONDUCTORS BY RAMAN SPECTROSCOPY Public/Granted day:2014-12-18
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