Invention Grant
- Patent Title: Ion implanter provided with a plurality of plasma source bodies
- Patent Title (中): 离子注入机设置有多个等离子体源体
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Application No.: US14647193Application Date: 2013-11-25
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Publication No.: US09520274B2Publication Date: 2016-12-13
- Inventor: Frank Torregrosa , Laurent Roux
- Applicant: ION BEAM SERVICES
- Applicant Address: FR Peynier
- Assignee: ION BEAM SERVICES
- Current Assignee: ION BEAM SERVICES
- Current Assignee Address: FR Peynier
- Agency: Sughrue Mion, PLLC
- Priority: FR1203188 20121127
- International Application: PCT/FR2013/000308 WO 20131125
- International Announcement: WO2014/083246 WO 20140605
- Main IPC: H01J37/36
- IPC: H01J37/36 ; H01J37/32

Abstract:
The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS1, CS2 free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI1-BCS1, BCI2-BCS2 per source body CS1, CS2.
Public/Granted literature
- US20150325412A1 ION IMPLANTER PROVIDED WITH A PLURALITY OF PLASMA SOURCE BODIES Public/Granted day:2015-11-12
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