Invention Grant
- Patent Title: Fin structure and method of forming the same
- Patent Title (中): 翅片结构及其形成方法
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Application No.: US14506682Application Date: 2014-10-05
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Publication No.: US09530868B2Publication Date: 2016-12-27
- Inventor: Nan-Yuan Huang , An-Chi Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410416418 20140822
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/311 ; H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L21/3065 ; H01L21/308
Abstract:
A fin structure and a method of forming the same, where the fin structure includes a fin and a protrusion having irregular shape. The fin and the protrusion are both formed on a substrate, and the protrusion has a height less than that of the fin. With such arrangement, the fin structure of the present invention, as well as the method of forming the same, can achieve the purpose of keeping the fin from collapsing and over etching.
Public/Granted literature
- US20160056045A1 FIN STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2016-02-25
Information query
IPC分类:
