Invention Grant
US09536792B2 Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof
有权
互补金属氧化物半导体场效应晶体管，金属氧化物半导体场效应晶体管及其制造方法
- Patent Title: Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof
- Patent Title (中): 互补金属氧化物半导体场效应晶体管，金属氧化物半导体场效应晶体管及其制造方法
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Application No.: US13738934Application Date: 2013-01-10
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Publication No.: US09536792B2Publication Date: 2017-01-03
- Inventor: Chien-Ting Lin , Shih-Hung Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12
Abstract:
A complementary metal oxide semiconductor field-effect transistor (MOSFET) includes a substrate, a first MOSFET and a second MOSFET. The first MOSFET is disposed on the substrate within a first transistor region and the second MOSFET is disposed on the substrate within a second transistor region. The first MOSFET includes a first fin structure, two first lightly-doped regions, two first doped regions and a first gate structure. The first fin structure includes a first body portion and two first epitaxial portions, wherein each of the first epitaxial portions is disposed on each side of the first body portion. A first vertical interface is between the first body portion and each of the first epitaxial portions so that the first-lightly doped region is able to be uniformly distributed on an entire surface of each first vertical interface.
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Information query
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