Invention Grant
US09536985B2 Epitaxial growth of material on source/drain regions of FinFET structure
有权
FinFET结构的源极/漏极区的材料的外延生长
- Patent Title: Epitaxial growth of material on source/drain regions of FinFET structure
- Patent Title (中): FinFET结构的源极/漏极区的材料的外延生长
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Application No.: US14499356Application Date: 2014-09-29
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Publication No.: US09536985B2Publication Date: 2017-01-03
- Inventor: Michael P. Chudzik , Brian J. Greene , Eric C. T. Harley , Judson R. Holt , Yue Ke , Rishikesh Krishnan , Renee T. Mo , Yinxiao Yang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Yuanmin Cai, Esq.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A method for producing a semiconductor structure, as well as a semiconductor structure, that uses a partial removal of an insulating layer around a semiconductor fin, and subsequently epitaxially growing an additional semiconductor material in the exposed regions, while maintaining the shape of the fin with the insulating layer.
Public/Granted literature
- US20160093720A1 EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRUCTURE Public/Granted day:2016-03-31
Information query
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