Invention Grant
- Patent Title: Substrate structure and manufacturing method thereof
- Patent Title (中): 基板结构及其制造方法
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Application No.: US14450297Application Date: 2014-08-04
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Publication No.: US09538647B2Publication Date: 2017-01-03
- Inventor: Chao-Min Wang
- Applicant: Chao-Min Wang
- Applicant Address: TW Hsinchu County
- Assignee: SUBTRON TECHNOLOGY CO., LTD.
- Current Assignee: SUBTRON TECHNOLOGY CO., LTD.
- Current Assignee Address: TW Hsinchu County
- Agency: Jianq Chyun IP Office
- Priority: TW103118287A 20140526
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H05K1/03 ; H05K1/02 ; H05K1/11 ; H05K3/46 ; H01L23/498 ; H01L21/48 ; H05K3/00

Abstract:
A substrate structure is provided. The substrate structure includes a substrate and a carrier. The substrate includes a first through hole, a first surface and a second surface opposite to the first surface. The first through hole penetrates the substrate for connecting the first surface and the second surface. The carrier includes a second through hole, a release layer, an insulating paste layer and a metal layer. The insulating paste layer is disposed between the release layer and the metal layer. The carrier is attached to the second surface with the release layer thereof. The second through hole corresponds to the first through hole and penetrates the carrier for exposing the first through hole.
Public/Granted literature
- US20150342040A1 SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-11-26
Information query
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