Invention Grant
- Patent Title: Radiation detector having a bandgap engineered absorber
- Patent Title (中): 具有带隙工程吸收体的辐射检测器
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Application No.: US14887261Application Date: 2015-10-19
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Publication No.: US09541450B2Publication Date: 2017-01-10
- Inventor: Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
- Applicant: DRS Network & Imaging Systems, LLC
- Applicant Address: US FL Melbourne
- Assignee: DRS Network & Imaging Systems, LLC
- Current Assignee: DRS Network & Imaging Systems, LLC
- Current Assignee Address: US FL Melbourne
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G01J5/00
- IPC: G01J5/00 ; G01J1/44 ; H01L31/0296 ; H01L31/103 ; H01L31/0216 ; H01L31/18 ; H01L31/0232 ; H01L31/024 ; H01L31/101

Abstract:
A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.
Public/Granted literature
- US20160069740A1 RADIATION DETECTOR HAVING A BANDGAP ENGINEERED ABSORBER Public/Granted day:2016-03-10
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