Invention Grant
- Patent Title: Group III nitride wafer and its production method
- Patent Title (中): III族氮化物晶圆及其制作方法
-
Application No.: US13834871Application Date: 2013-03-15
-
Publication No.: US09543393B2Publication Date: 2017-01-10
- Inventor: Tadao Hashimoto , Edward Letts , Sierra Hoff
- Applicant: SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
- Applicant Address: US CA Buellton KR Seoul
- Assignee: SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- Current Assignee: SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- Current Assignee Address: US CA Buellton KR Seoul
- Agency: Strategic Innovation IP Law Offices, P.C.
- Main IPC: H01L29/201
- IPC: H01L29/201 ; H01L29/20 ; C30B7/10 ; C30B29/40 ; C30B33/10 ; H01L21/02 ; C30B33/00
Abstract:
The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
Public/Granted literature
- US20140061662A1 GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD Public/Granted day:2014-03-06
Information query
IPC分类:
