Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14847521Application Date: 2015-09-08
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Publication No.: US09550667B1Publication Date: 2017-01-24
- Inventor: Cheng San Chou , Chin-Min Lin , Chen Hsiung Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTRUING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTRUING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H04R23/00
- IPC: H04R23/00 ; B81B7/00 ; B81C1/00 ; H01L43/02 ; H01L43/08 ; H01L43/12

Abstract:
A semiconductor structure includes a first substrate, a second substrate, a first sensing structure over the first substrate, and between the first substrate and the second substrate, a via extending through the second substrate, and a second sensing structure over the second substrate, and including an interconnect structure electrically connected with the via, and a sensing material at least partially covering the interconnect structure.
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