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公开(公告)号：US20130147993A1
公开(公告)日：2013-06-13
申请号：US13692104
申请日：2012-12-03
Inventor： Chin-Min Lin , Dun-Nian Yaung , Ching-Chun Wang , Tzu-Hsuan Hsu , Chun-Ming Su
IPC: H04N9/04
CPC classification number: H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H04N9/045
Abstract: An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.
Abstract translation: 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。
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公开(公告)号：US09966412B2
公开(公告)日：2018-05-08
申请号：US15647968
申请日：2017-07-12
Inventor： Chin-Min Lin , Ching-Chun Wang , Dun-Nian Yaung , Chun-Ming Su , Tzu-Hsuan Hsu
IPC: H01L21/00 , H01L27/146 , H04N9/04
CPC classification number: H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H04N9/045
Abstract: A device includes a semiconductor substrate, a plurality of micro-lenses disposed on the substrate, each micro-lens being configured to direct light radiation to a layer beneath the plurality of micro-lenses. The device further includes a transparent layer positioned between the plurality of micro-lenses and the substrate, the transparent layer comprising a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses, wherein the structure and the transparent material are coplanar at respective top surfaces and bottom surfaces thereof.
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公开(公告)号：US20170040378A1
公开(公告)日：2017-02-09
申请号：US15295703
申请日：2016-10-17
Inventor： Chin-Min Lin , Ching-Chun Wang , Dun-Nian Yaung , Chun-Ming Su , Tzu-Hsuan Hsu
IPC: H01L27/146 , H04N9/04
CPC classification number: H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H04N9/045
Abstract: A method includes forming a plurality of pixels formed on a front surface of a semiconductor substrate, forming an array of color filters over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels, forming a plurality of micro-lenses over the array of color filters, and forming a second layer between the pixels and the color filters. The second layer further includes a structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens, further wherein the plurality of micro-lenses are in contact with the array of color filters, and wherein the structure and the transparent material are coplanar at respective top surfaces thereof, and further wherein the structure directly contacts a bottom surface of at least one of the color filters.
Abstract translation: 一种方法包括形成在半导体衬底的前表面上形成的多个像素，在多个像素上形成滤色器阵列，每个滤色器适于允许光辐射的波长到达多个像素中的至少一个 的像素，在滤色器阵列上形成多个微透镜，以及在像素和滤色器之间形成第二层。 第二层还包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构，其中多个微透镜与滤色器阵列接触，并且其中该结构和透明材料 在其各自的顶表面处共面，并且其中该结构直接接触至少一个滤色器的底表面。
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公开(公告)号：US09550667B1
公开(公告)日：2017-01-24
申请号：US14847521
申请日：2015-09-08
Inventor： Cheng San Chou , Chin-Min Lin , Chen Hsiung Yang
CPC classification number: H01L43/12 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/07 , B81C2201/019 , H01L43/08
Abstract: A semiconductor structure includes a first substrate, a second substrate, a first sensing structure over the first substrate, and between the first substrate and the second substrate, a via extending through the second substrate, and a second sensing structure over the second substrate, and including an interconnect structure electrically connected with the via, and a sensing material at least partially covering the interconnect structure.
Abstract translation: 半导体结构包括第一衬底，第二衬底，第一衬底上的第一感测结构以及第一衬底和第二衬底之间的第一感测结构，穿过第二衬底的通孔，以及位于第二衬底上的第二感测结构，以及 包括与通孔电连接的互连结构，以及至少部分地覆盖互连结构的感测材料。
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公开(公告)号：US20240194650A1
公开(公告)日：2024-06-13
申请号：US18587406
申请日：2024-02-26
Inventor： Chin-Min Lin , Hung-Jen Hsu , Dun-Nian Yaung
IPC: H01L25/065 , G02B6/42 , G02B6/43 , H01L21/48 , H01L23/522 , H01L23/538
CPC classification number: H01L25/0657 , G02B6/4202 , G02B6/43 , H01L21/486 , H01L23/5226 , H01L23/5386
Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a first wafer including a plurality of electronic integrated circuits (EICs), forming a second wafer including a plurality of photonic integrated circuits (PICs), bonding the first wafer to the second wafer to form a first stacked wafer. The bonding of the first wafer to the second wafer includes vertically aligning each of the plurality of the EICs with one of the plurality of the PICs.
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Patent Agency Ranking
公开(公告)号：US11916043B2
公开(公告)日：2024-02-27
申请号：US17387731
申请日：2021-07-28
Inventor： Chin-Min Lin , Hung-Jen Hsu , Dun-Nian Yaung
IPC: H01L25/065 , H01L23/538 , H01L21/48 , G02B6/42 , H01L23/522 , G02B6/43
CPC classification number: H01L25/0657 , G02B6/4202 , G02B6/43 , H01L21/486 , H01L23/5226 , H01L23/5386
Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a first wafer including a plurality of electronic integrated circuits (EICs), forming a second wafer including a plurality of photonic integrated circuits (PICs), bonding the first wafer to the second wafer to form a first stacked wafer. The bonding of the first wafer to the second wafer includes vertically aligning each of the plurality of the EICs with one of the plurality of the PICs.
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公开(公告)号：US09711562B2
公开(公告)日：2017-07-18
申请号：US15295703
申请日：2016-10-17
Inventor： Chin-Min Lin , Ching-Chun Wang , Dun-Nian Yaung , Chun-Ming Su , Tzu-Hsuan Hsu
IPC: H01L31/0232 , H01L27/146 , H04N9/04
CPC classification number: H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H04N9/045
Abstract: A method includes forming a plurality of pixels formed on a front surface of a semiconductor substrate, forming an array of color filters over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels, forming a plurality of micro-lenses over the array of color filters, and forming a second layer between the pixels and the color filters. The second layer further includes a structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens, further wherein the plurality of micro-lenses are in contact with the array of color filters, and wherein the structure and the transparent material are coplanar at respective top surfaces thereof, and further wherein the structure directly contacts a bottom surface of at least one of the color filters.
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公开(公告)号：US11756972B2
公开(公告)日：2023-09-12
申请号：US17371279
申请日：2021-07-09
Inventor： Chin-Min Lin , Ching-Chun Wang , Dun-Nian Yaung , Chun-Ming Su , Tzu-Hsuan Hsu
IPC: H01L27/146 , H04N23/10 , H04N25/13
CPC classification number: H01L27/14621 , H01L27/1464 , H01L27/14623 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H04N23/10 , H04N25/134
Abstract: According to one example, a device includes a semiconductor substrate. The device further includes a plurality of color filters disposed above the semiconductor substrate. The device further includes a plurality of micro-lenses disposed above the set of color filters. The device further includes a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses. The structure and the color filters are level at respective top surfaces and bottom surfaces thereof.
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公开(公告)号：US20210335871A1
公开(公告)日：2021-10-28
申请号：US17371279
申请日：2021-07-09
Inventor： Chin-Min Lin , Ching-Chun Wang , Dun-Nian Yaung , Chun-Ming Su , Tzu-Hsuan Hsu
IPC: H01L27/146 , H04N9/04
Abstract: According to one example, a device includes a semiconductor substrate. The device further includes a plurality of color filters disposed above the semiconductor substrate. The device further includes a plurality of micro-lenses disposed above the set of color filters. The device further includes a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses. The structure and the color filters are level at respective top surfaces and bottom surfaces thereof.
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公开(公告)号：US09630832B2
公开(公告)日：2017-04-25
申请号：US14134060
申请日：2013-12-19
Inventor： Chin-Min Lin , Hsiang-Fu Chen , Wen-Chuan Tai , Hsin-Ting Huang , Chia-Ming Hung
CPC classification number: B81B7/007 , B81B2207/015 , B81B2207/095
Abstract: A semiconductor device includes a device substrate and a conductive capping substrate. The device substrate includes at least one micro-electro mechanical system (MEMS) device. The conductive capping substrate is bonded to the device substrate and includes a cap portion covering the MEMS device, and a conductor portion in electrical contact with the device substrate.
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