Invention Grant
- Patent Title: Multilayer substrate and method for manufacturing the same
- Patent Title (中): 多层基板及其制造方法
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Application No.: US14183492Application Date: 2014-02-18
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Publication No.: US09558859B2Publication Date: 2017-01-31
- Inventor: Ching Au , Manhong Zhao , Robert Conte
- Applicant: RSM Electron Power, Inc.
- Applicant Address: US NY Deer Park
- Assignee: RSM ELECTRON POWER, INC.
- Current Assignee: RSM ELECTRON POWER, INC.
- Current Assignee Address: US NY Deer Park
- Agency: David and Raymond Patent Firm
- Agent Raymond Y. Chan
- Main IPC: H01B1/02
- IPC: H01B1/02 ; H05K3/24 ; H01L23/373

Abstract:
The invention provides a slip layer substrate which can reduce the thermal residual stresses between components induced by their mismatch of thermal expansion, thus greatly improve the reliability of electronic packages. The slip layer substrate comprises: a base material; a first metallization layer formed on the base material; a first diffusion barrier layer formed on the first metallization layer; a slip layer formed on the first diffusion barrier layer; a second diffusion barrier layer formed on the slip layer; and a second metallization layer formed on the second diffusion barrier layer.
Public/Granted literature
- US20150237724A1 MULTILAYER SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-08-20
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