Invention Grant
- Patent Title: Package for high-power semiconductor devices
- Patent Title (中): 大功率半导体器件封装
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Application No.: US14580147Application Date: 2014-12-22
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Publication No.: US09559034B2Publication Date: 2017-01-31
- Inventor: Tarak A. Railkar , Deep C. Dumka
- Applicant: TriQuint Semiconductor, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/34 ; H01L21/78 ; H01L21/48 ; H01L23/00 ; H01L23/373
Abstract:
Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.
Public/Granted literature
- US20160155681A9 PACKAGE FOR HIGH-POWER SEMICONDUCTOR DEVICES Public/Granted day:2016-06-02
Information query
IPC分类:
