Invention Grant
- Patent Title: Method of depositing thin film
- Patent Title (中): 沉积薄膜的方法
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Application No.: US14526811Application Date: 2014-10-29
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Publication No.: US09564311B2Publication Date: 2017-02-07
- Inventor: Young Hoon Kim , Dae Youn Kim , Sang Wook Lee
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP HOLDING B.V.
- Current Assignee: ASM IP HOLDING B.V.
- Current Assignee Address: NL Almere
- Agency: Lex IP Meister, PLLC
- Priority: KR10-2013-0135036 20131107
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/30 ; C23C16/40 ; C23C16/452 ; C23C16/455

Abstract:
A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.
Public/Granted literature
- US20150125629A1 METHOD OF DEPOSITING THIN FILM Public/Granted day:2015-05-07
Information query
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