Invention Grant
- Patent Title: Power package with integrated magnetic field sensor
- Patent Title (中): 集成磁场传感器的功率封装
-
Application No.: US14747382Application Date: 2015-06-23
-
Publication No.: US09564423B2Publication Date: 2017-02-07
- Inventor: Liu Chen , Toni Salminen , Stefan Mieslinger , Giuliano Angelo Babulano , Jens Oetjen , Markus Dinkel , Franz Jost
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L43/02 ; H01L43/04 ; H01L43/08 ; H01L23/495 ; H01L23/31 ; H01L23/58 ; H01L23/498 ; G01R33/09 ; G01R33/07

Abstract:
A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.
Public/Granted literature
- US20160379966A1 POWER PACKAGE WITH INTEGRATED MAGNETIC FIELD SENSOR Public/Granted day:2016-12-29
Information query
IPC分类: