Invention Grant
- Patent Title: Image sensor with enhanced quantum efficiency
- Patent Title (中): 具有增强量子效率的图像传感器
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Application No.: US14612961Application Date: 2015-02-03
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Publication No.: US09565405B2Publication Date: 2017-02-07
- Inventor: Gang Chen , Dominic Massetti , Chih-Wei Hsiung , Arvind Kumar , Yuanwei Zheng , Duli Mao , Dyson H. Tai
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04N9/04
- IPC: H04N9/04 ; H01L27/146 ; H04N5/3745

Abstract:
A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.
Public/Granted literature
- US20160227147A1 IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY Public/Granted day:2016-08-04
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