Invention Grant
- Patent Title: Silicon photomultiplier with improved detection accuracy
- Patent Title (中): 硅光电倍增管,检测精度提高
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Application No.: US14388162Application Date: 2012-03-29
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Publication No.: US09568360B2Publication Date: 2017-02-14
- Inventor: Tetsuo Furumiya
- Applicant: Tetsuo Furumiya
- Applicant Address: JP Kyoto
- Assignee: SHIMADZU CORPORATION
- Current Assignee: SHIMADZU CORPORATION
- Current Assignee Address: JP Kyoto
- Agency: McDermott Will & Emery LLP
- International Application: PCT/JP2012/002199 WO 20120329
- International Announcement: WO2013/145011 WO 20131003
- Main IPC: G01J1/42
- IPC: G01J1/42 ; G01J1/44 ; H01L31/02 ; G01T1/24 ; H01L27/144 ; G01T1/20 ; G01T1/208

Abstract:
One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.
Public/Granted literature
- US20150053847A1 SILICON PHOTOMULTIPLIER Public/Granted day:2015-02-26
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