Invention Grant
US09573799B2 MEMS device having variable gap width and method of manufacture
有权
具有可变间隙宽度的MEMS器件和制造方法
- Patent Title: MEMS device having variable gap width and method of manufacture
- Patent Title (中): 具有可变间隙宽度的MEMS器件和制造方法
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Application No.: US14290297Application Date: 2014-05-29
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Publication No.: US09573799B2Publication Date: 2017-02-21
- Inventor: Andrew C. McNeil , Yizhen Lin , Lisa Z. Zhang
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: H01L27/14
- IPC: H01L27/14 ; B81B3/00 ; G01P15/08 ; G01P15/125 ; B81B7/02 ; H01L21/66 ; H01L21/683
Abstract:
A MEMS device (40) includes a base structure (42) and a microstructure (44) suspended above the structure (42). The base structure (42) includes an oxide layer (50) formed on a substrate (48), a structural layer (54) formed on the oxide layer (50), and an insulating layer (56) formed over the structural layer (54). A sacrificial layer (112) is formed overlying the base structure (42), and the microstructure (44) is formed in another structural layer (116) over the sacrificial layer (112). Methodology (90) entails removing the sacrificial layer (112) and a portion of the oxide layer (50) to release the microstructure (44) and to expose a top surface (52) of the substrate (48). Following removal, a width (86) of a gap (80) produced between the microstructure (44) and the top surface (52) is greater than a width (88) of a gap (84) produced between the microstructure (44) and the structural layer (54).
Public/Granted literature
- US20140260616A1 MEMS DEVICE HAVING VARIABLE GAP WIDTH AND METHOD OF MANUFACTURE Public/Granted day:2014-09-18
Information query
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