Invention Grant
US09574108B2 Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
有权
用于形成二氧化硅基绝缘层的组合物，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
- Patent Title: Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
- Patent Title (中): 用于形成二氧化硅基绝缘层的组合物，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
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Application No.: US14259845Application Date: 2014-04-23
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Publication No.: US09574108B2Publication Date: 2017-02-21
- Inventor: Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
- Applicant: Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
- Applicant Address: KR Gumi-si, Gyeongsangbuk-Do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0094274 20130808
- Main IPC: C08L83/05
- IPC: C08L83/05 ; B05D1/00 ; C09D183/04 ; C08L83/02 ; H01L21/02
Abstract:
A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:
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